PENGARUH RAPAT CACAT DANGLING-BOND LAPISAN (p)a-Si:H PADA KINERJA SEL SURYA STRUKTUR p-i-n

Abstract

Numerical validation of homojunction solar cells based on a-Si:H experimental results were physically analyzed using the AFORS-HET (Automat FOR Simulation of HETerostructure) simulator by reviewing the effect of dangling-bond (DB) defects on the (p)a-Si:H layer (Ntr) on the performance of solar cell structure TCO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/Ag. The variation of the Ntr is given according to the experimental results between 5.0 x 1017–5.0 x1019 cm-3/eV operated at different thicknesses of the p-layer accompanied by analysis of the energy band diagram, J-V characteristic curve, electric field profile, and charge carrier concentration. The simulation results show that the solar cell works optimally if the Ntr parameter value can be controlled for a value of < 5.0 x 1018 cm-3/eV, where in this condition the efficiency that can be achieved is around 7.68% (VOC = 947.2 mV, JSC = 10.84 mA/cm2; FF = 74.82%) with p-layer thickness is 10 nm.