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dc.contributor.authorHamdani, Dadan
dc.date.accessioned2022-07-26T10:18:25Z
dc.date.available2022-07-26T10:18:25Z
dc.date.issued2021-06-26
dc.identifier.citationhttps://doi.org/10.1080/15421406.2021.1922226en_US
dc.identifier.issn1563-5287
dc.identifier.urihttp://repository.unmul.ac.id/handle/123456789/38897
dc.description.abstractThis study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p’)nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the Eff of p-p’-i-n is 9.60% (VOC ¼ 936.6 mV, JSC ¼ 13.86 mA/cm2, FF ¼ 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 1017 particles/cm3, 1.0 x 1019 particles/cm3, 1.80 eV, and 600 nm, respectivelyen_US
dc.description.sponsorshipBUDI-LPDP Departemen Keuanganen_US
dc.publisherMOLECULAR CRYSTALS AND LIQUID CRYSTALSen_US
dc.subjectAFORS-HET; buffer layer; nc-Si:H; p/i interface; thin film solar cellsen_US
dc.titlePerformances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical studyen_US
dc.typeArticleen_US


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