dc.contributor.author | Hamdani, Dadan | |
dc.date.accessioned | 2022-07-26T10:18:25Z | |
dc.date.available | 2022-07-26T10:18:25Z | |
dc.date.issued | 2021-06-26 | |
dc.identifier.citation | https://doi.org/10.1080/15421406.2021.1922226 | en_US |
dc.identifier.issn | 1563-5287 | |
dc.identifier.uri | http://repository.unmul.ac.id/handle/123456789/38897 | |
dc.description.abstract | This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p’)nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the Eff of p-p’-i-n is 9.60% (VOC ¼ 936.6 mV, JSC ¼ 13.86 mA/cm2, FF ¼ 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 1017 particles/cm3, 1.0 x
1019 particles/cm3, 1.80 eV, and 600 nm, respectively | en_US |
dc.description.sponsorship | BUDI-LPDP Departemen Keuangan | en_US |
dc.publisher | MOLECULAR CRYSTALS AND LIQUID CRYSTALS | en_US |
dc.subject | AFORS-HET; buffer layer; nc-Si:H; p/i interface; thin film solar cells | en_US |
dc.title | Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study | en_US |
dc.type | Article | en_US |